SK Hynix reveals first Nand UFS 4.1 memory of 321 layers

SK Hynix is ​​the first company to present a TLC Nand UFS 4.1 solution of 321 layers for storage drives and mobile devices. The company promises only advantages for its new chips: more performance and energy efficiency, while resulting in less thick components – even though they have a larger number of layers.

The new generation represents a leap in relation to UFS 3.1, presented first in 2022 with 238 layers. According to SK Hynix, UFS 4.1 offers up to 15% more random reading speed, with random recording improving up to 40%. In the sequential reading part, the new technology reaches the maximum allowed by the interface, with 4.3gb/s.

And performance gains are accompanied by an energy efficiency up to 7% better. In addition, the manufacturer says that the packaging of Nand is only 0.85mm thick, a reduction in relation to 1mm of the past generation. These aspects are especially advantageous on mobile devices.

As it should be, SK Hynix emphasizes the use of its new Nand for AI on cell phones and tablets. “We are on the way to expand our position as a full-stack memory provider for IA in the Nand segment by building a product portfolio with the technological advantage for AI,” said Ahn Hyun, one of the company’s leaders.

SK Hynix states that it is closing contracts with its customers for the new Nand technology this year, so we should expect mass production from the first products with UFS 4.1 in Q1 of 2026.

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The company will deliver 512GB and 1TB components, so we’ll probably not look at advanced segments with 256GB next year. In addition, SSDS and even professional drives with Nand UFS 4.1 of 321 layers should also appear.

Via: Gsmarena