Samsung will adopt hybrid connection to HBM4 memory

Samsung has confirmed that it will adopt hybrid binding technology in its HBM4 memory, aiming to improve thermal dissipation and allow an ultralarga memory interface. The announcement was made during the AI ​​Semiconductor Forum held in Seoul, South Korea.

High-Bandwidth Memory (HBM) technology stacked several memory chips on a base, traditionally connected via microbumps and interconnected by TSVs (through-sylicon via). However, As HBM evolves, microbumples become inefficient, limiting energy performance and efficiency.

Already Hybrid binding technology directly connects memory chips, eliminating microbumes by joining copper and oxide surfaces. Thus, interconnections are possible with less than 10 µm of spacing. The result is lower resistance and capacitance with higher connection density and better thermal dissipation.

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SK HYNIX SITUATION

Competitor SK Hynix should delay the adoption of hybrid connection technology for cost and manufacturing efficiency reasons. Alternatively, the company plans to develop an advanced MR-MUF as an alternative and use hybrid connection technology as a backup if necessary.

That is, SK Hynix plans 16-HI HBM4 production, respecting JEDEC standards, without depending on hybrid connection.

The main reason is that technology implementation equipment is significantly more expensive and occupy more factory spacereducing the financial viability of SK Hynix installing the process.

Advantages for Samsung

Samsung is in advantage because it has its own manufacturer of production equipment, Semes, reducing manufacturing costs. If the company can qualify HBM4 with hybrid connection, it can gain significant competitive advantage.

With the implementation of technology in HBM4 memories, the company should increase performance, thermal efficiency and signal density. And if the strategy is successful, Samsung will be able to recover market share against Micron and SK Hynix, with mass production scheduled for 2026.

Still in April, Samsung was first surpassed in the DRAM market after 33 years by SK Hynix that won 36% of the DRAM market against 34% of Samsung. Micron has 25%, so it is still behind Samsung. However, the company is interested in returning to the top of the list.

Not only, in late April Google would have given up Samsung’s HBM3E memories and favored Micron memories. If in the short term impacts can be small, in the long run can damage the company and Samsung would already be eyeing Micron to supply to Google.

Source: Tom’s hardware.