Samsung is accelerating the development of your LPDDR6 memory, using the advanced process of MANUFACTURING 1C DRAMwith the objective of maintaining its leadership position against increasing competition from Chinese manufacturers, such as the Changxin Memory Technologies (CXMT).
The New Generation of Memory promises greater bandwidth e lower energy consumptionessential characteristics for applications in artificial intelligence, mobile computing, robotics and autonomous vehicles.
CXMT advances rapidly and presses competition
CXMT completed the LPDDR5X development at the end of 2023 and started mass production at the beginning of 2024. Recently, the company began to develop its own LPDDR6, with expectations to start large -scale production by 2026.
Such progress puts pressure on Samsung to accelerate its own development and production schedules.
Process 1C DRAM: Samsung Technological Differential
This is the letter in the sleeve at the moment. Samsung plans to manufacture LPDDR6 using its Process 1c DRAM, The sixth generation of its 10nm DRAM manufacturing technology.
The process allows greater density and energy efficiencyproviding significant advantages in performance and energy consumption compared to previous generations.
The company has already shown advances in this regard with the launch of LPDDR5-ULTRA-PRO, reaching Speeds up to 12.7 Gbps.
What is and how does the 1c DRAM process work?
the term “1c DRAM” refers to sixth generation of DRAM memory manufacturing processes Based on nodes of 10 nanometers (NM), following the incremental nomenclature of the industry: 1x, 1y, 1z, 1a, 1b and now 1c.
Each new generation seeks to further reduce the size of the bits that store bits, raising density and efficiency.
See, in a simplified way, how the process 1c DRAM is implemented:
1. Extreme miniaturization
The transition to the 1C process means manufacturing transistors and capacitors in scales below 12 nm. The feat allow more memory cells to fit in the same chip, increasing the capacity without raising the physical size.
2. Advanced Lithography Techniques
1C production requires the use of Extreme Ultraviolet Lithography (EUV) in some layers. The technique allows you to sculpt more accurate patterns in silicon wafers, essential for miniaturization.
3. New generation materials
With such small components, it is necessary to use Low Dielectric Low-Low-K) materials to minimize electrical interference and New dielectrics for capacitorsthat help maintain the stability of load storage.
4. Optimized architecture of memory cells
In process 1c, DRAM cell architecture is refined to reduce energy losses and improve load retentionwhich results in lower consumption and greater stability.
5. Thermal and Electric Efficiency
The combination of these technologies allows LPDDR6 memory manufactured in 1C to offer Greater bandwidth and lower energy consumptionmeeting AI requirements, mobile devices and advanced embarked systems.
6. Larga -scale production
Once the process is dominated, manufacturers like Samsung adjust the production lines to obtain High yield rates (yield) – That is, as many functional chips as possible per wafer – critical factor for competitiveness and cost.
In summary: 1C DRAM is a combination of miniaturization, material innovation, manufacturing accuracy and architectural optimizationwhich allows you to produce faster, denser and more efficient chips.
The use of process 1c DRAM will be decisive to expand the technological advantage over competitors
See how the evolution of LPDDR has shaped the market
Over the course of almost two decades, each new generation of these memories has brought significant advances in transfer speed and energy efficiency: Essential factors for boosting mobile, automotive device capacities and artificial intelligence applications.
The table below summarizes this LPDDR1 innovation trajectory to current expectations for LPDDR6:
| Generation | Introduction Year (approx.) | Process (node) | Theoretical maximum speed | Energy consumption | Typical applications |
|---|---|---|---|---|---|
| LPDDR1 | 2007–2008 | ~80–90 nm | ~400 Mbps | Alto | Primeiros smartphones, MP3 players |
| LPDDR2 | 2009–2011 | ~65–40 nm | ~1066 Mbps | ~ 50% lower than LPDDR1 | Smartphones, initial tablets |
| LPDDR3 | 2013–2014 | ~25–20 nm | ~2133 Mbps | Average | Smartphones, more advanced tablets |
| LPDDR4 | 2014–2015 | ~20 nm | ~3200 Mbps | ~ 40% lower than LPDDR3 | High performance mobile devices |
| Lpddr4x | 2017 | ~16–18 nm | ~4266 Mbps | ~ 10% lower than LPDDR4 | Smartphones premium, wearables |
| LPDDR5 | 2019 | ~12–14 nm | ~6400 Mbps | ~ 30% lower than LPDDR4X | 5G Smartphones, Embedded |
| LPDDR5X | 2022 | ~10–12 nm | ~8533 Mbps | Light reduction on LPDDR5 | MOBILE IA, AR/VR, Automotive |
| LPDDR6 | Expected 2025–2026 | 1c (~ 10 nm or smaller) | > 10,000–12,800 Mbps (expected) | ~ 20–30% lower than LPDDR5x | IA, robotics, automotive, notebooks, new generation smartphones |
IMPORTANT NOTES:
- The velocities indicated are maximum theoretics by pin; Real performance depends on implementation.
- The indicated process nodes are approximate as manufacturers often use marketing designations or hybrid processes.
- From LPDDR5, memories begin to be strongly optimized also to Energy efficiency under intense loadas I was going and graphic processing.
- The first generations (LPDDR1/2) were crucial to enable mobility that we know today.
- The most expressive leap in energy efficiency began from the LPDDR4.
- With each generation, the focus has been turned not only to speedbut also for low consumption even under AI loadscom Enhanced Thermal Management.
Qualcomm will be one of the first to adopt LPDDR6
Qualcomm is among the first clients to incorporate Samsung’s LPDDR6 into their products.
The next Snapdragon 8 Chipset Elite Gen 2, scheduled to be announced at Snapdragon Summit in September 2025, It must support this new memory.
Wait-be that to LPDDR6 provide performance improvements of 30% to 40% compared to LPDDR5X, benefiting mobile devices and high performance PCs.
Also read:
Implications for the global semiconductor market
The early adoption of Samsung’s LPDDR6 can consolidate its position in the low -consumer memories market, especially at a time when CXMT expands its production capacity and seeks to reduce technological difference with industry leaders.
However, challenges like heating problems e yield still affects CXMT products, which can limit your competitiveness in the short term.
The race for mastery in the production of low -consumption memories is intensifying, with Samsung seeking to maintain its leadership through the adoption of advanced technologies such as the 1C Dram process in the manufacture of LPDDR6.
On the other hand, CXMT continues to advance rapidly, representing significant competition in the global semiconductor market. For consumers, this is great because long -term competition tends to accelerate innovations and make products more accessible.
Fonte: Business Post
Source: https://www.adrenaline.com.br/hardware/samsung-acelera-producao-memoria-ram-lpddr6-china/
