China develops the fastest flash memory in the world with writing in just 400 picoscundos

A promising technological advancement has just left the laboratories of the FUDAN UNIVERSITYin Shanghai. Researchers led by Professor Zhou Peng developed the First flash memory in the world capable of writing data in just 400 pecoscundos – Time equivalent to a trilionic second.

It is an unprecedented innovation in the digital storage sector, with the potential to transform the performance of devices and systems that require response in real time.

Comparison of writing speed of current memories vs. Pox (Fudan University)

After all, what is a pecoscundo?

One Picoscundo (PS) It is equivalent to a trilionesimo of second or 0.0000000001 seconds (10⁻¹² S). It is such a tiny time scale that common human actions or even quick electronic processes seem extremely slow in comparison.

To better understand how impressive it is to reach a 400 -peculum writing speed, see the table below comparing the pecosecundo with other time scales we use in science and daily life:

Comparative Time Scales Table

The scale demonstrates how the advance of memory pox Fudan University is not just a technological leap, but a milestone in the limit of current physics and engineering.

We are talking about operations occurring in trilliones of secondwhich opens doors to a new era of computational performance.

Pox: The new generation of memory chips

The chip named PoX (Phase-change Oxide) It establishes a new reference in non -volatile memory. Unlike current technologies such as SSDs and USB sticks – which operate in micro or milliseconds – POX performs operations thousands of times faster, keeping data even when the device is off.

For the purpose of comparison, RAM Memories as SRAM e DRAMAlthough fast, they lose all data when there is power outage. Pox, in turn, combines extreme access speed com Data Persistencewhich makes it ideal for applications in artificial intelligence and high performance computing.

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Graphene and superinjection: the secrets of speed

The Fudan team innovated to replace traditional silicon with bidimensional dirac graphenematerial known for its exceptional electrical conductivity. The exchange allowed the development of a phenomenon called Superinjection 2Din which electric charges flow almost unlimited and extremely fast for the storage layer of the chip.

By using AI algorithms to optimize the testing process, we were able to advance significantly and pave the way for future applications of this technology

Professor Zhou Pengexplaining the technology to the Xinhua agency

In addition to the graphene, the researchers adjusted the Gaussian length of the memory channel, which contributed to achieving previously unimaginable speeds in non -volatile memories.

Practical applications and next steps

The team has already produced a functional chip in reduced scalewith encouraging results in the phase of Physical Validation (Tape-Out). Now, the next challenge is to integrate Pox technology on real devices like Smartphones and Computerswhere the demand for rapid and efficient storage grows exponentially.

According to researcher Liu Chunsen, from Fudan’s National Laboratory of Systems and Integrated Chips:

With this integrated technology, we will no longer have bottlenecks such as crashes or overheating when performing local AI models on devices

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A future where memory will no longer be the weak link

If the POX consolidates itself as a commercial solution, it may eliminate one of the greatest bottlenecks of modern computing: Time spent transferring data between storage and processors.

In AI systems, for example, most of the energy is consumed by moving data, not processing it. With Pox, this scenario may change dramatically.

Source: Xinhua