Kioxia Announces 3D Nand of 10th generation with 322 layers and up to 4.8gb/s speed

Kioxia announced last week the introduction of the 10th generation of its technology for 3D Nand Memories. The technology was developed in partnership with Sandisk and promises performance up to 33% better than the 8th generation of chips, reached a total of 322 layers.

The new generation of Kioxia Nand 3D memories uses a new interface pattern called Toggle DDR6.0, which delivers up to 4.8gb/s speed, according to the company. Meanwhile, the 322 layers of Nand – compared to the 218 layers of the 8th generation – help offer a bit density up to 59% higher, reaching 36.2gb/mm², according to Tom’s hardware.

As I could not help but talk about the dissemination of the new technology, HESHIHI MIYAJIMA, executive of Kioxia, mentioned: “With the proliferation of AI technologies, the amount of data generated is designed to grow significantly and so will be the need for more energy efficiency on modern data centers ”.

Thus, Kioxia promises better efficiency in its 10th generation of 3D Nand. The company says it has a 10% reduction for input and up to 34% for output, thanks to the use of Power ISoLed Low-Tapped Termination (PI-LTT).

Kioxia walks at the right pace for 1,000 layers Nand?

Nand 3D Chips with 322 layers are certainly a considerable increase, but still somewhat distant from the total of 1,000. Unless Kioxia has a mango letter for a surprising advance in its next generations of technology, the company will need to accelerate its development pace if it wants to keep its promises.

This is because in July last year the company ambitiously stated that it will break the 1,000 layers barrier in a Nand 3D memory as early as 2027. The company now has two years to do this.

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We have no forecast for the arrival of products based on the 10th generation of Kioxia, but since the ninth generation has not yet reached the market yet, the next seems somewhat distant.