SK Hynix Announces First 16Gb DDR5 RAM on 6th Gen 10nm

SK Hynix has announced that it can now produce 16GB DDR5 RAM modules using its sixth-generation 10nm process, also known as 1c. These are the first components of their kind, and the manufacturer is particularly promising greater energy efficiency.

The 1c process is based on the same 10nm lithography as its predecessor, 1b, but brings advances. The promise is that the 16Gb RAM modules will be 11% faster than their predecessors and up to 9% more efficient. The manufacturer claims that, with the finished product, data centers can save their energy costs by up to 30% using the new memories.

SK Hynix also highlights other memory types that benefit from the technology. “We are committed to delivering differentiated value to our customers by applying 1c technology equipped with the best performance and cost competitiveness in our next-generation flagship products, including HBM, LPDDR6 and GDDR7,” said Kim Jonghwan, vice president of DRAM development.

SK Hynix’s advances in RAM technology are especially important now that the company has announced plans to increase the price of its DDR5 modules.

The company took advantage of the announcement of its first 16Gb DDR5 modules to reveal that it has increased its memory production capacity. The company is optimizing its use of EUV technology in its factories, and has increased production by up to 30% for its 6th generation 10nm DDR5 RAM.

Once again showing that tech companies don’t make announcements without mentioning AI, Jonghwan added: “We will continue to work to maintain our leadership in the DRAM space and position as the most trusted provider of memory solutions for AI.”

More memories:

Part of that search is directly focused on HBM, as the big memory companies race to get ahead of the next generation of these components.

Source: Tom’s Hardware